GaN Power Devices Market is Expected To Dominate by North America

Global GaN Power Devices Market
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Growing demand for high-performance power-switching devices in industrial and commercial applications and steadily growing investments of mobile operators in 5G infrastructure are expected to drive the Global GaN Power Devices Market during the forecast period of 2024-2028.

According to TechSci Research report, GaN Power Devices Market Global Industry Size, Share, Trends, Opportunity, and Forecast, 2018–2028, the Global GaN Power Devices Market is anticipated to register a robust growth during the forecast period, 2024-2028” due to factors such as surging use of GaN for commercial applications, rising use of GaN-based components in defense industry, introduction of fast mobile chargers with GaN technology are expected to drive the Global GaN Power Devices Market.

Rising funds in 5G infrastructure development in various nations has spurred the demand for GaN power devices. Some of the profitable applications are used in power amplifiers, RF radios, antenna modules, MIMO systems, and base transceiver station (BTS). On the other hand, advancement of next-generation data centers presents huge opportunity for players in the Global GaN Power Devices Market.

Moreover, massive consumer electronics demand indicates enormous development potential. Businesses are investing in the expanding use of GaN devices in a variety of portable consumer goods, wireless chargers, and USB chargers. Higher switching frequencies and extraordinarily high-power densities are two major advantages of GaN designs. The increasing use of these devices in enhancing industrial power supply is generating significant revenue for GaN power devices manufacturers.

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Additionally, during the lockdown era, several multinational companies have put forward strict government rules & regulations to initiate work from home culture, which is set to reflect the growing demand for electronics products such as mobiles, chargers, laptops, and IoT-based devices. The high demand for fast chargers and IoT-based services are set to directly increase the sales of GaN power devices.

Recent Developments in the Global GaN Power Devices Market:

In April 2022, in order to develop and mass-produce next-generation GaN (gallium nitride) power devices, leading power supply maker Delta Electronics and global semiconductor supplier ROHM Semiconductor have partnered strategically.

In 2022, Navitas Semiconductor, a manufacturing leader in gallium nitride (GaN) power ICs, and Avnet Silica, announced close collaboration between the two companies to grow the market in Europe for Navitas’ advanced performance and highly power efficient GaN Fast power ICs with GaN Sense technology.

Global GaN Power Devices Market is segmented on the basis of device type, voltage range application, end user, and region.

During the projection period, the defense segment is expected to register a high CAGR. GaN-based systems are being used more frequently in military radar, electronic warfare, anti-IED jammers, and 3G/4G base stations, which is responsible for this growth. Owing to their distinctive properties, these devices are employed to create effective optoelectronic industrial machinery as well as devices for high-temperature and renewable energy applications.

Moreover, due to the extensive use of GaN on diamond-based transistors, wireless communication devices, radar sensing equipment, power electronics devices, IT and telecommunication, and aerospace & military industries in the region, North America is a global leader in the market for GaN power devices. Additionally, to attain cost-effectiveness and excellent performance for semiconductor devices, the region’s rapid technical breakthroughs and significant investments in research and development are boosting the demand for GaN power devices.

Major market players operating in the Global GaN Power Devices Market are:

  • Efficient Power Conversion Corporation
  • NXP Semiconductors
  • GaN Systems
  • Wolfspeed, Inc.
  • Infineon Technologies AG
  • EPISTAR Corporation
  • Rohm Co., Ltd.
  • On Semiconductor Corporation
  • Qorvo, Inc
  • MACOM Technology Solutions Holdings Inc

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“GaN power devices are increasingly preferred over silicon-based devices owing to their superior performance characteristics, particularly their great energy economy and dependability in power applications. Growing demand from the IT & telecom, automotive, and consumer electronics sectors is boosting the market for power GaN devices. Additionally, the growing trend of power electronics shrinking is opening up more opportunities for new product development for GaN device producers, particularly for GaN devices below 200V. Additionally, the strong demand for GaN power devices from developing nations such as China and India for use in their defense industries is anticipated to be supportive of growth.”, said Mr. Karan Chechi, Research Director with TechSci Research, a research-based global management consulting firm.

“GaN Power Devices Market- Global Industry Size, Share, Trends, Opportunities, and Forecast 2018-2028. Segmented By Device Type (Power Vs RF Power), By Voltage Range (<200 Volt, 200-600 Volt & >600 Volt), By Application (Power Drivers, Supply & Inverter & Radio Frequency), By End User (Telecommunication, Industrial, Automotive, Renewables, Consumer & Enterprise, Military Defense and Aerospace & Medical), By Region, Competition”, has evaluated the future growth potential of Global GaN Power Devices Market and provides statistics & information on market size, structure, and future market growth. The report intends to provide cutting-edge market intelligence and help decision makers take sound investment decisions. Besides, the report also identifies and analyzes the emerging trends along with essential drivers, challenges, and opportunities in Global GaN Power Devices Market.

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