According to TechSci Research, Global GaN Power Devices market is projected to grow at a CAGR of over 29%, in value terms, during 2014-2024. Growing requirement of GaN devices for commercial applications, increasing demand for GaN devices in wireless charging, rising R&D activities by major players in the market, rising number of new entrants the market and increase in government expenditure on electronic sector are some factors, that will propel the demand for GaN Power Devices over the next five years. APAC is anticipated to remain a strong contributor in the GaN Power Devices market in the forecast period, owing to strong awareness and use of the product. APAC is expected to register faster CAGR than any other region, backed by increased focus on R&D activities by the emerging players and developing economies.
Years considered for this report:
Historical Year : 2014 – 2017
Base Year : 2018
Estimated : 2019
Forecast : 2020 – 2024
Objective of the Study:
- To analyze and forecast market size of the global GaN power devices market, in terms of value & volume.
- To define, classify and forecast the global GaN power devices on the basis of device type, voltage range, application, end user and region.
- To scrutinize the detailed market segmentation and forecast the market size, in terms of value, on the basis of region by segmenting global GaN power devices into five regions, namely, North America, South America, Europe, Asia Pacific and MEA.
- To identify tailwinds and headwinds for the global GaN power devices market.
- To examine competitive developments such as expansions, new product launches, contracts and mergers & acquisitions in the global GaN power devices market.
- To evaluate competitor and trends in the global GaN power devices market.
- To strategically profile the leading players, which are involved in of GaN power devices market globally.
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Some of the major players operating in the global GaN Power Devices are Cree , Qorvo , MACOM , Microsemi Corporation , Analog Devices, Efficient Power Conversion , Integra Technologies , Transphorm , Navitas Semiconductor , Texas Instruments , Sumitomo Electric, Northrop Grumman Corporation , Qromis etc.
TechSci Research performed primary as well as exhaustive secondary research for this study. Initially, TechSci Research sourced a list of GaN power devices manufactures globally. Subsequently, TechSci Research conducted primary research surveys with the identified companies. While interviewing, the respondents were also enquired about their competitors. Through this technique, TechSci Research was able to include manufactures and suppliers that could not be identified due to the limitations of secondary research. TechSci Research analysed type, form, processing, application and regional presence of all major GaN power devices manufacturers across the globe.
TechSci Research calculated the market size for the global GaN power devices using a bottom-up approach, where manufacturers’ value data for different type of (power and RF power), GaN power devices was recorded as well as forecast for the future years was made. TechSci Research sourced these values from industry experts and company representatives, and externally validated through analyzing historical sales data of respective manufactures to arrive at the overall market size. Various secondary sources such as company annual reports, white papers, investor presentations and financial reports were also used by the TechSci Research.
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Key Target Audience:
- Global GaN power devices manufacturers
- Research organizations and consulting companies
- Organizations, associations and alliances related to GaN power devices
- Government bodies such as regulating authorities and policy makers.
- Industry associations
- Market research and consulting firms
The study is useful in providing answers to several critical questions that are important for industry stakeholders, such as manufacturers, suppliers and policy makers, which market segments should be targeted over the GaN power devices coming years (next five years) in order to strategize investments and capitalize on growth of the market.
Report Scope:
In this report, global GaN power devices have been segmented into following categories, in addition to the industry trends which have also been detailed below:
- Market, by Device Type:
- Global GaN Power Devices Market
- Power
- RF Power
- Global GaN Power Devices Market
- Market, by Volt Range:
-
- <200 Volt
- 200-600 Volt
- >600 Volt
-
- Market, by Application:
-
- Power Drivers
- Supply and Inverter
- Radio Frequency
-
- Market, by End User:
-
- Telecommunication
- Industrial
- Automotive
- Renewables
- Consumer & Enterprise
- Military Defense
- Aerospace & Medical
-
- Market, by Geography:
- North America
- United States
- Canada
- Mexico
- Rest of North America
- Europe
- United Kingdom
- Germany
- France
- Italy
- Spain
- Rest of Europe
- Asia Pacific
- China
- Japan
- South Korea
- Australia
- India
- Rest of APAC
- South America
- Brazil
- Argentina
- Colombia
- Rest of South America
- MEA
- Saudi Arabia
- UAE
- Israel
- South Africa
- Rest of MEA
- North America
Competitive Landscape
Competition Benchmarking: Benchmarking of leading 10 players
Company Profiles: Detailed analysis of the major companies present in the global GaN power devices market.
About TechSci Research
TechSci Research is a leading global market research firm publishing premium market research reports. Serving 700 global clients with more than 600 premium market research studies, TechSci Research is serving clients across 11 different industrial verticals. TechSci Research specializes in research-based consulting assignments in high growth and emerging markets, leading technologies and niche applications. Our workforce of more than 100 fulltime Analysts and Consultants employing innovative research solutions and tracking global and country specific high growth markets helps TechSci clients to lead rather than follow market trends.
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