Overview and Scope
The silicon carbide power semiconductor market consists of sales of metal-oxide-semiconductor field-effect transistors (MOSFETs), junction field-effect transistors (JFETs), and insulated gate bipolar transistors (IGBTs). Values in this market are ‘factory gate’ values, that is the value of goods sold by the manufacturers or creators of the goods, whether to other entities (including downstream manufacturers, wholesalers, distributors and retailers) or directly to end customers. The value of goods in this market includes related services sold by the creators of the goods.
Sizing and Forecast
The silicon carbide power semiconductor market size has grown exponentially in recent years. It will grow from $0.99 billion in 2023 to $1.24 billion in 2024 at a compound annual growth rate (CAGR) of 26.0%. The growth in the historic period can be attributed to SiC power devices being used in electric vehicle charging systems, SiC power devices operating at higher temperatures, the expanding consumer electronics industry, advanced electronic components used in power, and the expanding automotive and renewable energy sector.
The silicon carbide power semiconductor market size is expected to see exponential growth in the next few years. It will grow to $3.16 billion in 2028 at a compound annual growth rate (CAGR) of 26.3%. The growth in the forecast period can be attributed to the prevalence of SiC discrete devices, the increase in the demand for consumer electronics and wireless communications, the rising penetration of electronic vehicles, the growing demand for energy-efficient battery-powered portable devices, and the advent of SiC power semiconductors. Major trends in the forecast period include technological advancements, new competitors to gain technology, the surge in innovations, product innovations, and technology launches.
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Segmentation & Regional Insights
The silicon carbide power semiconductor market covered in this report is segmented –
1) By Type: Metal-Oxide Semiconductor Field-Effect Transistors (MOSFETs), Hybrid Modules, Schottky Barrier Diodes (SBDS), Insulated Gate Bipolar Transistors (IGBT), Bipolar Junction Transistor (BJT), Pin Diode, Junction FET (JFET), Other Types
2) By Voltage Range: 301-900 V, 901-1700 V, Above 1701 V
3) By Wafer Type: SiC Epitaxial Wafers, Blank SiC Wafers
4) By Application: Electric Vehicles (EV), Photovoltaics, Power Supplies, Industrial Motor Drives, Electric Vehicles Charging Infrastructure, RF Devices, Other Applications
5) By End-User: Industrial, Automotive, Energy And Power, Information Technology And Telecom, Transportation, Aerospace And Defense, Other End-Users
Asia-Pacific was the largest region in the silicon carbide power semiconductor market in 2023. Asia-Pacific is expected to be the fastest-growing region in the market. The regions covered in the silicon carbide power semiconductor market report are Asia-Pacific, Western Europe, Eastern Europe, North America, South America, Middle East, Africa.
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Major Driver Impacting Market Growth
The rising penetration of electric vehicles is expected to drive the growth of the silicon carbide power semiconductor market going forward. An electric vehicle (EV) is a type of vehicle that uses one or more electric motors for propulsion. The penetration of electric vehicles is due to technological innovation, regulatory support, consumer demand, and industry investment. Silicon carbide (SiC) power semiconductors play a crucial role in electric vehicles (EVs) by improving efficiency, reducing weight, and enhancing overall performance compared to traditional silicon-based semiconductors. Their adoption continues to grow as EV manufacturers seek to optimize the performance of their vehicles and improve the driving experience for consumers. For instance, in March 2022, according to an article published by the Department of Energy, a US-based government agency, sales of new light-duty plug-in electric vehicles, encompassing both all-electric vehicles (EVs) and plug-in hybrid electric vehicles (PHEVs), nearly doubled from 308,000 in 2020 to 608,000 in 2021. Therefore, the rising penetration of electric vehicles drives growth in the silicon carbide power semiconductor market.
Key Industry Players
Major companies operating in the silicon carbide power semiconductor market are Samsung Electronics Co. Ltd., Panasonic Corporation, Mitsubishi Electric Corporation, Toshiba Corporation, Eaton Corporation plc, Texas Instruments Inc., STMicroelectronics N.V., Infineon Technologies AG, BorgWarner Inc., NXP Semiconductors N.V., Renesas Electronics Corporation, Danfoss A/S, Microchip Technology Inc., ON Semiconductor Corporation, Fuji Electric Co. Ltd., ROHM Co. Ltd., Littelfuse Inc., Microsemi Corporation, Wolfspeed Inc., GeneSiC Semiconductor Inc.
The silicon carbide power semiconductor market report table of contents includes:
1. Executive Summary
2. Silicon Carbide Power Semiconductor Market Characteristics
3. Silicon Carbide Power Semiconductor Market Trends And Strategies
4. Silicon Carbide Power Semiconductor Market – Macro Economic Scenario
5. Global Silicon Carbide Power Semiconductor Market Size and Growth
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32. Global Silicon Carbide Power Semiconductor Market Competitive Benchmarking
33. Global Silicon Carbide Power Semiconductor Market Competitive Dashboard
34. Key Mergers And Acquisitions In The Silicon Carbide Power Semiconductor Market
35. Silicon Carbide Power Semiconductor Market Future Outlook and Potential Analysis
36. Appendix
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